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| (R) 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 TO-3 s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 K R2 Typ. = 55 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 100 100 100 5 12 20 0.2 150 -65 to 200 200 Unit V V V V A A A W o o C C February 2003 1/4 2N6059 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEX V CE = rated V CEX V CE = 50 V V EB = 5 V I C = 100 mA 100 T c = 150 o C Min. Typ. Max. 0.5 5 1 2 Unit mA mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) V BE h FE fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency IC = 6 A I C = 12 A I C = 12 A IC = 6 A IC = 6 A I C = 12 A IC = 5 A I B = 24 mA I B = 120 mA I B = 120 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V f =1 MHz 750 100 4 2 3 4 2.8 V V V V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 2N6059 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E 2N6059 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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